SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet

MOSFET N/P-CH 30V 2.5/1.8A 6TSOP

SI3552DV-T1-E3

Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI3552DV-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Company:
Part Number:
SI3552DV-T1-E3
Quantity:
70 000
Company:
Part Number:
SI3552DV-T1-E3
Quantity:
901
Notes
a.
b.
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Surface Mounted on FR4 Board.
t v 5 sec
i
N-Channel
N-Channel
P Channel
P-Channel
3 mm
J
ti
Ordering Information: Si3552DV-T1
G1
G2
S2
t A bi
V
DS
J
J
a b
a, b
- 30
30
30
= 150_C)
= 150_C)
t
30
a
a
1
2
3
Top View
(V)
TSOP-6
2.85 mm
Parameter
Parameter
N- and P-Channel 30-V (D-S) MOSFET
a b
a, b
6
5
4
a, b
0.360 @ V
0.200 @ V
0.175 @ V
D1
S1
D2
0.105 @ V
r
DS(on)
A
GS
GS
GS
GS
= 25_C UNLESS OTHERWISE NOTED)
(W)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
Steady State
Steady State
T
T
T
T
t v 5 sec
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
1
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
I
P
P
, T
DM
thJA
D
I
I
I
thJL
GS
D
S
DS
D
D
S
- 1.8
- 1.2
D
D
2.5
2.0
1
1
stg
(A)
N-Channel
Typical
"20
1.05
130
2.5
2.0
30
93
75
FEATURES
D TrenchFETr Power MOSFET
D 100% R
8
- 55 to 150
G
1.15
0.73
2
P-Channel MOSFET
P-Channel
Maximum
g
Vishay Siliconix
Tested
- 1.05
"20
150
- 30
- 1.8
- 1.2
110
90
- 7
S
D
2
2
Si3552DV
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

Related parts for SI3552DV-T1-E3

SI3552DV-T1-E3 Summary of contents

Page 1

... P Channel P-Channel - 30 30 TSOP-6 Top View 2.85 mm Ordering Information: Si3552DV-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...

Page 2

... Si3552DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance ...

Page 3

... I - Drain Current (A) D Gate Charge 1 Total Gate Charge (nC) g Document Number: 70971 S-31725—Rev. B, 18-Aug- Si3552DV Vishay Siliconix NCHANNEL Transfer Characteristics 55_C C 25_C Gate-to-Source Voltage (V) GS Capacitance 300 250 C iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 - 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... V 0.2 0.1 0 Drain Current (A) D Document Number: 70971 S-31725—Rev. B, 18-Aug-03 Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec Si3552DV Vishay Siliconix NCHANNEL - PCHANNEL Transfer Characteristics 55_C C 6 25_C Gate-to-Source Voltage (V) GS Capacitance 300 240 C iss 180 120 ...

Page 6

... Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 1 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.1 0.00 0.3 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0 250 mA D 0.0 - 0 Temperature (_C) J www.vishay.com 25_C 1.2 1.5 100 ...

Page 7

... Single Pulse 0. Document Number: 70971 S-31725—Rev. B, 18-Aug-03 Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec) Si3552DV Vishay Siliconix PCHANNEL Notes Duty Cycle Per Unit Base = R = 130_C/W thJA (t) 3 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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