SI4947ADY-T1-E3 Vishay, SI4947ADY-T1-E3 Datasheet

MOSFET P-CH DUAL 30V 3.0A 8-SOIC

SI4947ADY-T1-E3

Manufacturer Part Number
SI4947ADY-T1-E3
Description
MOSFET P-CH DUAL 30V 3.0A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4947ADY-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.9 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
62mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Power Dissipation Pd
1.2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4947ADY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4947ADY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4947ADY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4947ADY-T1-E3
Quantity:
11 000
Company:
Part Number:
SI4947ADY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71101
S09-0870-Rev. D, 18-May-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 30
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4947ADY -T1-E3
Si4947ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.135 at V
Top View
0.080 at V
SO-8
R
DS(on)
J
a
= 150 °C)
a
GS
GS
Dual P-Channel 30-V (D-S) MOSFET
= - 4.5 V
8
7
6
5
(Ω)
= - 10 V
(Lead (Pb)-free)
D
D
D
D
a
1
1
2
2
a
A
I
= 25 °C, unless otherwise noted
D
- 3.9
- 3.0
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
G
I
DM
thJA
thJF
I
DS
GS
D
S
D
1
stg
P-Channel MOSFET
®
S
D
Power MOSFETs
1
1
Typical
10 s
- 3.9
- 3.1
- 1.7
2.0
1.3
54
87
34
- 55 to 150
± 20
- 30
- 20
Steady State
Maximum
- 3.0
- 2.4
- 1.0
0.76
62.5
105
1.2
45
Vishay Siliconix
G
2
Si4947ADY
P-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4947ADY-T1-E3

SI4947ADY-T1-E3 Summary of contents

Page 1

... Top View Si4947ADY -T1-E3 Ordering Information: (Lead (Pb)-free) Si4947ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4947ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71101 S09-0870-Rev. D, 18-May-09 1000 800 600 400 200 0.40 0.32 0.24 0. °C J 0.08 0.00 0.9 1.2 1.5 Si4947ADY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 3 1.6 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si4947ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 I 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords