SI4500BDY-T1-E3 Vishay, SI4500BDY-T1-E3 Datasheet
SI4500BDY-T1-E3
Specifications of SI4500BDY-T1-E3
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SI4500BDY-T1-E3 Summary of contents
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... SO Top View Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a,b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4500BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 72281 S09-0705-Rev. D, 27-Apr- 1600 1400 1200 1000 Si4500BDY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 800 600 C oss 400 200 C rss ...
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... Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.3 0 Source-to-Drain V oltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 75 100 125 150 100 Limited (DS)on ...
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... Single Pulse 0. Document Number: 72281 S09-0705-Rev. D, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4500BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA - ( ...
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... Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.12 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current 5 Total Gate Charge (nC) g Gate Charge www.vishay.com ° ° 0.0 0.5 1.0 1.5 2 ...
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... I Limited DM Limited (DS) D(on) Limited °C A 0.1 Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Si4500BDY Vishay Siliconix 0. 0.08 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0 Time (s) Single Pulse Power P( ...
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... Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...