ZXMN6A09DN8TC Diodes Zetex, ZXMN6A09DN8TC Datasheet
ZXMN6A09DN8TC
Specifications of ZXMN6A09DN8TC
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ZXMN6A09DN8TC Summary of contents
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Product Summary V R (BR)DSS DS(on) 80mΩ =10V GS 100V 150mΩ =4.5V GS Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for ...
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Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current V = 10V GS Pulsed Drain current V = 10V GS Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics ...
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Thermal Characteristics 10 R DS(on) Limited 100ms 100m 10ms Single Pulse 10m T =25°C amb 100m 1 V Drain-Source Voltage (V) DS Safe Operating Area 120 T =25°C amb 100 80 D=0 D=0.2 20 100µ ...
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Electrical Characteristics @T Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Notes 5 & 6) Diode Forward Voltage (Note 5) Reverse recovery time ...
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Typical Characteristics 10V T = 25° 0.1 0 Drain-Source Voltage (V) DS Output Characteristics V = 10V 150° 25°C 0.1 0. Gate-Source Voltage (V) GS Typical ...
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Typical Characteristics – continued 600 400 C ISS 200 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Charge Basic gate charge waveform V DS ...
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Package Outline Dimensions DIM θ ZXMN6A08E6 Document Number DS33376 Rev Millimeters Min Max 0.90 1.45 0.00 0.15 0.90 1.30 0.20 0.50 0.09 0.26 2.70 3.10 2.20 ...
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Suggested Pad Layout DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE ...