SI7540DP-T1-E3 Vishay, SI7540DP-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI7540DP-T1-E3
• Description: MOSFET N/P-CH 12V PWRPAK 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7540DP-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.6A, 5.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.017 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 11.8A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7540DP-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71911
S09-0227-Rev. F, 09-Feb-09
- 0.2
- 0.4
- 0.6
20
10
0.4
0.2
0.0
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
0.4
- Temperature (°C)
T
25
J
= 150 °C
0.6
50
I
D
= 250 μA
75
0.8
0.01
100
0.1
10
100
Limited by R
1
T
0.1
J
Safe Operating Area, Junction-to-Ambient
= 25 °C
1.0
125
Limited
I
Single Pulse
D(on)
T
A
DS(on)
V
= 25 °C
150
1.2
DS
- Drain-to-Source Voltage (V)
BVDSS Limited
1
I
0.15
0.12
0.09
0.06
0.03
0.00
DM
10
40
32
24
16
8
0
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
0.1
= 3 A
1
100
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
2
1
Time (s)
I
Vishay Siliconix
D
= 8.9 A
3
10
Si7540DP
www.vishay.com
4
100
600
5
7