SH8M3TB1 Rohm Semiconductor, SH8M3TB1 Datasheet
SH8M3TB1
Specifications of SH8M3TB1
Related parts for SH8M3TB1
SH8M3TB1 Summary of contents
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Drive Nch+Pch MOSFET SH8M3 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching converter. Packaging specifications Package Taping Type Code TB ...
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SH8M3 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V 30 (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V 1.0 GS (th) Static drain-source on-state ∗ (on) ...
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SH8M3 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage I GSS −30 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −1.0 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) ...
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SH8M3 N-ch Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 =10V V DS ...
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SH8M3 P-ch Electrical characteristic curves 10000 Ta=25°C f=1MHz = 1000 C iss C oss 100 C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 = −10V ...
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