SP8M3FU6TB Rohm Semiconductor, SP8M3FU6TB Datasheet
SP8M3FU6TB
Specifications of SP8M3FU6TB
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SP8M3FU6TB Summary of contents
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Transistors Switching SP8M3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching converter. Absolute maximum ratings (Ta=25°C) Parameter Symbol V Drain-source voltage DSS V Gate-source voltage GSS ...
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Transistors N-ch Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance ...
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Transistors P-ch Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance ...
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Transistors N-ch Electrical characteristic curves 1000 Ta=25°C f=1MHz = iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 =10V V DS ...
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Transistors P-ch Electrical characteristic curves 10000 Ta=25°C f=1MHz = 1000 C iss C oss 100 C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 = −10V ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...