SP8K24FU6TB Rohm Semiconductor, SP8K24FU6TB Datasheet
SP8K24FU6TB
Specifications of SP8K24FU6TB
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SP8K24FU6TB Summary of contents
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Transistor 4V Drive Nch+Nch MOSFET SP8K24 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). Applications Power switching , converter , Inverter Packaging dimensions Package Taping Type Code Basic ...
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Transistor Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static ...
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Transistor Electrical characteristic curves 10 V =10V DS pulsed o Ta=125 -25 C 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : V [V] GS Fig.1 Typical Transfer Characteristics ...
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Transistor Measurement circuits D.U. Fig.10 Switching Time Test Circuit (Const.) D.U. Fig.12 Gate Charge Test Circuit ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...