IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 6

• Manufacturer Part Number: IRF8313PBF
• Description: MOSFET N-CH DUAL 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier

Specifications of IRF8313PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 21.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 14a. Unclamped Inductive Test Circuit
6
Fig 12. On-Resistance vs. Gate Voltage
38
34
30
26
22
18
14
10
Fig 15a. Switching Time Test Circuit
2.0
R G
20V
R
V DS
GS
V
V
V GS , Gate-to-Source Voltage (V)
t p
4.0
V
≤ 0.1 %
I AS
≤ 1
D.U.T
0.01 Ω
L
6.0
D.U.T.
15V
R
DRIVER
T J = 125°C
T J = 25°C
8.0
I D = 9.8A
+
-
V DD
A
+
- V
10.0
Fig 14b. Unclamped Inductive Waveforms
200
160
120
80
40
0
V
90%
10%
V
Fig 15b. Switching Time Waveforms
DS
GS
25
Fig 13. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
I
AS
t
50
d(on)
vs. Drain Current
75
t
r
t p
100
TOP
BOTTOM
www.irf.com
125
t
d(off)
V
(BR)DSS
150
5.0A
3.0A
8.0A
I D
t
f
175