IRF8910TRPBF International Rectifier, IRF8910TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF8910TRPBF
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8910TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 960pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8910PBFTR; IRF8910TRPBF; IRF8910TRPBFTR

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0.01
10
100
0.1
9
8
7
6
5
4
3
2
1
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
T A , Ambient Temperature (°C)
Ambient Temperature
50
0.01
0.20
0.02
0.10
0.05
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
0.01
1
R
1
Fig 10. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
τ
2
τ
R
2
-75
2
R
2
-50
R
τ
3
3
R
τ
0.1
3
3
I D = 250µA
-25
τ
R
4
T J , Temperature ( °C )
τ
4
R
4
4
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
R
5
τ
5
R
5
25
5
1
τ
C
τ
C
Ri (°C/W) τi (sec)
50
1.2647
2.0415
18.970
23.415
16.803
75
10
100
0.000091
0.000776
0.188739
0.757700
25.10000
125
5
150
100