IRFI4019H-117P International Rectifier, IRFI4019H-117P Datasheet - Page 4

• Manufacturer Part Number: IRFI4019H-117P
• Description: MOSFET N-CH 150V 8.7A TO-220FP-5
• Manufacturer: International Rectifier

Specifications of IRFI4019H-117P

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 18W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Straight Leads)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 95 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 18 W
• Mounting Style: Through Hole
• Gate Charge Qg: 13 nC
• Minimum Operating Temperature: - 40 C
• For Use With: IRAUDAMP7S - BOARD REF DESIGN 2CH AUDIO AMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
4
10
100
0.1
8
6
4
2
0
10
1
25
0.0
0.001
0.01
0.1
10
1
1E-006
V SD , Source-to-Drain Voltage (V)
T J = 150°C
50
T J , Junction Temperature (°C)
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.02
0.20
0.05
0.10
0.01
0.5
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
T J = 25°C
100
1.0
V GS = 0V
125
0.0001
1.5
t 1 , Rectangular Pulse Duration (sec)
150
0.001
τ
J
τ
0.01
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
Fig 10. Threshold Voltage vs. Temperature
1
R
5.0
4.0
3.0
2.0
1
100
0.1
10
τ
-75
1
2
R
τ
2
2
Fig 8. Maximum Safe Operating Area
R
1
2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Tc = 25°C
Tj = 150°C
Single Pulse
-50
R
τ
3
3
R
τ
V DS , Drain-toSource Voltage (V)
3
3
-25
DC
τ
C
τ
T J , Temperature ( °C )
1msec
Ri (°C/W)
1.508254 0.000814
2.154008 0.111589
3.237738
0
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
1
25
100µsec
50
τι (sec)
2.2891
100
I D = 50µA
75
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10
100 125
1000
150