FMM22-06PF IXYS, FMM22-06PF Datasheet - Page 2

• Manufacturer Part Number: FMM22-06PF
• Description: MOSFET MOD N-CH 600V 12A I4-PAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of FMM22-06PF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: i4-PAC™
• Vdss, Max, (v): 600
• Id25, Tc = 25°c, (a): 12
• Rds(on), Max, Tj = 25°c, (ohms): 350
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Tf, Typ, (ns): 23
• Tr, Typ, (ns): 20
• Pd, (w): -
• Rthjc, Max, (c/w): 0.95
• Package Style: ISOPLUS i4-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
BV
V
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
GSS
DSS
S
SM
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(on)
iss
oss
rss
thJC
thCS
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
g(on)
gs
gd
RM
J
DSS
= 25°C unless otherwise specified)
I
V
V
V
V
V
V
V
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
Test Conditions
F
F
R
GS
DS
GS
DS
GS
GS
DS
GS
GS
GS
GS
G
= 22A, -di/dt = 100A/μs
= 22A, V
= 100V, V
= 4Ω (External)
= 10V, V
= 0V
= 20V, I
= 0V, V
= 10V, V
= 0V
= 0V, I
= V
= ±30 V, V
= V
= 10V, I
ADVANCE TECHNICAL INFORMATION
GS
DSS
, I
GS
D
DS
D
D
DS
D
= 250μA
DS
GS
= 1mA
= 0V, Note 1
= 11A, Note 1
= 11A, Note 1
= 25V, f = 1MHz
= 0.5 V
DS
= 0.5 V
= 0V
4,835,592
4,881,106
3
2
= 0V
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
T
= 11A
= 11A
J
= 125°C
T
J
5,049,961
5,063,307
5,187,117
= 25°C unless otherwise specified)
JM
Min.
5,237,481
5,381,025
5,486,715
600
Characteristic Values
3.0
15
Min.
Characteristic Values
Typ.
1.0
6,162,665
6,259,123 B1
6,306,728 B1
3600
0.15
305
Typ.
20
20
60
23
58
20
22
38
20
Max.
200
1.5
12
66
± 100
0.95 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
250 μA
350 mΩ
5.0
25 μA
°C/W
μC
nC
nC
nC
pF
nA
pF
pF
ns
ns
ns
ns
ns
A
A
V
V
V
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
FMM22-06PF
7,005,734 B2
7,063,975 B2
TM
Outline
Ref: IXYS CO 0077 R0
7,157,338B2