NTJD5121NT1G ON Semiconductor, NTJD5121NT1G Datasheet - Page 4

• Manufacturer Part Number: NTJD5121NT1G
• Description: MOSFET N-CH DUAL 60V SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD5121NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 295mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 26pF @ 20V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.295 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

40
30
20
10
0
0
C
C
C
oss
iss
rss
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
4
TYPICAL PERFORMANCE CURVES
8
0.01
0.1
1
0.4
12
Figure 9. Diode Forward Voltage vs. Current
V
GS
T
J
= 0 V
= 85°C
V
SD
T
V
, SOURCE−TO−DRAIN VOLTAGE (V)
16
J
GS
0.6
= 25°C
= 0 V
http://onsemi.com
T
20
J
= 25°C
4
0.8
5
4
3
2
1
0
0
(T
I
T
V
D
J
J
DD
= 25°C unless otherwise noted)
= 0.2 A
= 25°C
Drain−to−Source Voltage vs. Total Charge
= 25 V
1
0.2
Q
Figure 8. Gate−to−Source and
g
, TOTAL GATE CHARGE (nC)
0.4
1.2
0.6
0.8
1