NTHD2102PT1G ON Semiconductor, NTHD2102PT1G Datasheet

NTHD2102PT1G

Manufacturer Part Number

NTHD2102PT1G

Description

MOSFET PWR P-CH DUAL 8V CHIPFET

Manufacturer

ON Semiconductor

Datasheet

1.NTHD2102PT1G.pdf (6 pages)

Specifications of NTHD2102PT1G

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

58 mOhm @ 3.4A, 4.5V

Drain To Source Voltage (vdss)

Current - Continuous Drain (id) @ 25° C

3.4A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

16nC @ 2.5V

Input Capacitance (ciss) @ Vds

715pF @ 6.4V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

8-ChipFET™

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.058 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

8 S

Drain-source Breakdown Voltage

8 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

3.4 A

Power Dissipation

1100 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTHD2102PT1GOS
NTHD2102PT1GOS
NTHD2102PT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTHD2102PT1G

Manufacturer:

Quantity:

36 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTHD2102PT1G

Manufacturer:

ON/安森美

Quantity:

20 000

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NTHD2102P

Power MOSFET

−8.0 V, −4.6 A Dual P−Channel ChipFETt

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

MAXIMUM RATINGS (T

November, 2005 − Rev. 5

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current − Continuous

Total Power Dissipation

Operating Junction and Storage Temperature

Continuous Source Current

Thermal Resistance (Note 1)

Maximum Lead Temperature for Soldering

making it an Ideal Device for Applications where Board Space is at a

Premium

Environments such as Portable Electronics

Operating Voltage used in many Logic ICs in Portable Electronics

Voltages are not Required

Migration to Lower Levels using the same Basic Topology

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

Offers an Ultra Low R

Miniature ChipFET Package 40% Smaller Footprint than TSOP−6

Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Designed to Provide Low R

Simplifies Circuit Design since Additional Boost Circuits for Gate

Operated at Standard Logic Level Gate Drive, Facilitating Future

Pb−Free Package is Available

Optimized for Battery and Load Management Applications in

Charge Control in Battery Chargers

Buck and Boost Converters

[1 oz] including traces).

Continuous @ T

(5 sec) @ T

Continuous @ 85°C

(5 sec) @ 85°C

Range

(Diode Conduction)

Junction−to−Ambient, 5 sec

Junction−to−Ambient, Continuous

Purposes, 1/8″ from case for 10 seconds

− 5 seconds

= 25°C

Rating

= 25°C

DS(on)

= 25°C unless otherwise noted)

DS(on)

Solution in the ChipFET Package

at Gate Voltage as Low as 1.8 V, the

Symbol

, T

DSS

qJA

stg

−55 to

Value

"8.0

+150

−8.0

−3.4

−4.6

−1.1

113

260

1.1

2.1

0.6

1.1

°C/W

Unit

°C

NTHD2102PT1

NTHD2102PT1G

†For information on tape and reel specifications,

P−Channel MOSFET

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

−8.0 V

(BR)DSS

CONNECTIONS

Device

ORDERING INFORMATION

D5 = Specific Device Code

http://onsemi.com

100 mW @ −1.8 V

50 mW @ −4.5 V

68 mW @ −2.5 V

= Month Code

= Pb−Free Package

DS(on)

(Pb−Free)

Package

ChipFET

Publication Order Number:

TYP

P−Channel MOSFET

CASE 1206A

MARKING

DIAGRAM

3000/Tape & Reel

ChipFET

STYLE 2

Shipping

NTHD2102P/D

−4.6 A

MAX

†

Related parts for NTHD2102PT1G

NTHD2102PT1G Summary of contents

Page 1

... Is −1.1 A °C qJA R 113 qJA Device °C T 260 L NTHD2102PT1 NTHD2102PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on −4 −2.5 V −4.6 A 100 mW @ −1.8 V ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate−Body Leakage Current Zero Zero Gate Voltage Drain Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain−to−Source On−Resistance Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 10 −2.4 thru − −V , Drain−to−Source Voltage (V) DS Figure 1. On−Region Characteristics 0.30 0. −1 0.20 0.15 0.10 0. ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − Total Gate Charge (nC) g, Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 ...

Page 6

... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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