NTLJD3115PT1G ON Semiconductor, NTLJD3115PT1G Datasheet

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... −55 to °C J STG 150 I −1 260 °C L NTLJD3115PT1G NTLJD3115PTAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX (Note 1) DS(on) D 100 mW @ −4.5 V −4.1 A 135 mW @ −2.5 V 200 mW @ − ...

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THERMAL RESISTANCE RATINGS Parameter SINGLE OPERATION (SELF−HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ (Note 3) DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient ...

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MOSFET ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Gate Threshold V Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance ...

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TYPICAL PERFORMANCE CURVES −1 − 4.5 4 3.5 3 2.5 2 1 0.5 1 1.5 2 2.5 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.1 V ...

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TYPICAL PERFORMANCE CURVES 1200 1000 C iss 800 600 400 C rss C 200 oss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...

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TYPICAL PERFORMANCE CURVES 1000 D = 0.5 100 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 (T = 25°C unless otherwise noted (pk DUTY CYCLE 0.001 ...

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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...