NTUD3171PZT5G ON Semiconductor, NTUD3171PZT5G Datasheet

MOSFET P-CH DUAL 20V SOT-963

NTUD3171PZT5G

Manufacturer Part Number
NTUD3171PZT5G
Description
MOSFET P-CH DUAL 20V SOT-963
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTUD3171PZT5G

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 100mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
13.5pF @ 15V
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.35 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.2 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTUD3171PZT5G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTUD3171PZT5G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NTUD3171PZT5G
Quantity:
5 000
NTUD3171PZ
Small Signal MOSFET
−20 V, −200 mA, Dual P−Channel,
1.0 x 1.0 mm SOT−963 Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2. Pulse Test: pulse width v300 ms, duty cycle v2%
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 0
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
Package
Thin Environments such as Portable Electronics.
Dual P−Channel MOSFET
Offers a Low R
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
This is a Pb−Free Device
High Side Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Equipment
1 oz Cu.
(Note 1)
(1/8” from case for 10 s)
Parameter
DS(on)
(T
Steady
t v 5 s
Steady
t v 5 s
Solution in the Ultra Small 1.0 x 1.0 mm
J
State
State
= 25°C unless otherwise specified)
T
T
T
T
t
p
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
V
T
V
I
P
T
DSS
DM
STG
T
I
I
GS
D
S
J
D
L
,
−55 to
Value
−200
−140
−250
−125
−200
−600
−200
−20
150
260
±8
1
Unit
mW
mA
mA
mA
°C
°C
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
G1
V
CASE 527AD
(BR)DSS
−20 V
SOT−963
D
G
S
2
1
4
M
G
1
ORDERING INFORMATION
2
3
1
D1
S1
http://onsemi.com
PINOUT: SOT−963
5.0 W @ −4.5 V
6.0 W @ −2.5 V
7.0 W @ −1.8 V
10 W @ −1.5 V
= Specific Device Code
= Date Code
= Pb−Free Package
R
DS(ON)
Top View
P−Channel
MOSFET
Publication Order Number:
MAX
G2
MARKING
DIAGRAM
NTUD3171PZ/D
1
6
5
4
4 M G
I
−0.2 A
D
D2
S
S2
D
G
2
Max
1
2

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NTUD3171PZT5G Summary of contents

Page 1

NTUD3171PZ Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package Features • Dual P−Channel MOSFET • Offers a Low R Solution in the Ultra Small 1.0 x 1.0 mm DS(on) Package • 1.5 V ...

Page 2

... Turn−Off Delay Time Fall Time 4. Switching characteristics are independent of operating junction temperatures ORDERING INFORMATION Device NTUD3171PZT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Symbol R qJA = 25° ...

Page 3

V 0. 2.2 thru 0.28 0.24 0.20 0.16 0.12 0.08 0. DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics ...

Page 4

C iss oss rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0. 0. 0.14 0.12 0.10 0.08 ...

Page 5

... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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