IRF7331 International Rectifier, IRF7331 Datasheet - Page 2

• Manufacturer Part Number: IRF7331
• Description: MOSFET 2N-CH 20V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7331

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7331

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
Notes:

V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
(BR)DSS
GS(th)
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.013 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1340 –––
–––
–––
–––
–––
–––
Surface mounted on 1 in square Cu board
0.6
20
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
110
170
120
3.7
2.1
7.6
13
22
50
31
15
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
1.2
1.2
1.0
25
20
2.0
30
45
47
23
28
V/°C
mΩ
nC
nC
pF
ns
V
V
V
S
di/dt = 100A/µs ‚
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 7.0A
= 1.0A
= 25°C, I
= 25°C, I
= 53Ω
= 0V, I
= 4.5V, I
= 2.5V, I
= V
= 10V, I
= 16V, V
= 16V, V
= 12V
= -12V
= 10V
= 4.5V
= 10V ‚
= 4.5V
= 0V
= 16V
GS
Conditions
, I
D
S
F
D
D
Conditions
= 250µA
D
D
GS
GS
= 2.0A
= 2.0A, V
= 250µA
= 7.0A
= 7.0A ‚
= 5.6A ‚
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 70°C
= 0V ‚
G
S
D