IRF5810 International Rectifier, IRF5810 Datasheet - Page 7

• Manufacturer Part Number: IRF5810
• Description: MOSFET 2P-CH 20V 2.9A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5810

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Fig 15. Threshold Voltage Vs. Temperature
-75
-50
-25
T J , Temperature ( °C )
0
25
50
I D = -250µA
75
100 125 150
60
50
40
30
20
10
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Typical Power Vs. Time
Time (sec)
7