IRF7755 International Rectifier, IRF7755 Datasheet

MOSFET 2P-CH 20V 3.9A 8-TSSOP

IRF7755

Manufacturer Part Number
IRF7755
Description
MOSFET 2P-CH 20V 3.9A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7755

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
51 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1090pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7755GTRPBF
Manufacturer:
IRF
Quantity:
20 000
Thermal Resistance
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
@ T
@ T
JA
, T
Dual P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Gate-to-Source Voltage
Linear Derating Factor
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
provides thedesigner
GS
GS
@ -4.5V
@ -4.5V
2
3
4
1
1 = D1
4 = G1
2 = S1
3 = S1
V
-20V
DSS
HEXFET
8 = D2
5 = G2
7 = S2
6 = S2
51m @V
86m @V
R
-55 to +150
8
7
6
5
Max.
125
DS(on)
Max.
0.64
0.01
-3.9
-3.1
-20
-15
±20
1
®
GS
GS
IRF7755
Power MOSFET
max
= -4.5V
= -2.5V
TSSOP-8
PD -93995A
-
-
3.7A
2.8A
Units
Units
I
W/°C
°C/W
D
°C
W
W
V
V
A
1
4/9/01

Related parts for IRF7755

IRF7755 Summary of contents

Page 1

... STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V R DSS DS(on) -20V 51m @V 86m @ -4. -4.5V GS -55 to +150 Max. 125 PD -93995A IRF7755 ® Power MOSFET max -4.5V 3. -2.5V 2. TSSOP-8 Max. Units -20 V -3.9 -3 0.64 W 0.01 W/°C ±20 V °C Units °C/W 1 4/9/01 ...

Page 2

... IRF7755 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM -1.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V DS 0.0 2.5 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7755 VGS TOP -7.5V -4.5V -3.5V -3.0V -2.5V -2.0V -1.75V BOTTOM -1.5V -1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -3. ...

Page 4

... IRF7755 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.2 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7755 D.U. µ d(off thJA ...

Page 6

... IRF7755 0.160 0.120 0.080 -3.7A 0.040 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.200 0.150 0.100 0.050 0.000 6.0 7.0 8.0 0 Fig 13. Typical On-Resistance Vs. 12V V GS Fig 14b. Gate Charge Test Circuit VGS = -2 ...

Page 7

... WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) WORK YEAR Y WEEK W 2001 2002 2003 1994 1995 E 1996 F 1997 G 1998 H 1999 J 2000 8LT SSOP (MO-153AA) Ø 13" FEED DIRECT ION NOT ES APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. IRF7755 16mm 7 ...

Page 8

... IRF7755 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. ...

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