IRF7756 International Rectifier, IRF7756 Datasheet

MOSFET 2P-CH 12V 4.3A 8-TSSOP

IRF7756

Manufacturer Part Number
IRF7756
Description
MOSFET 2P-CH 12V 4.3A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7756

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 4.5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7756
l
l
l
l
l
Thermal Resistance
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Description
Absolute Maximum Ratings
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J
θJA
DS
D
D
GS
Dual P-Channel MOSFET
@ T
@ T
, T
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
@T
@T
STG
A
A
A
A
®
= 25°C
= 70°C
= 25°C
= 70°C
Power MOSFETs from International Rectifier
Gate-to-Source Voltage
Maximum Junction-to-Ambient
Linear Derating Factor
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Parameter
Parameter
provides thedesigner

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
2
3
4
1
1 = D1
4 = G1
2 = S 1
3 = S 1
V
-12V
DSS
HEXFET
5 = G2
8 = D2
7 = S 2
6 = S 2
0.040@V
0.058@V
0.087@V
R
-55 to +150
7
Max.
8
6
5
125
DS(on)
Max.
0.64
-4.3
-3.5
8.0
-12
-17
1.0
±8.0
®
GS
GS
GS
IRF7756
Power MOSFET
max
= -4.5V
= -2.5V
= -1.8V
TSSOP-8
±
±
±
mW/°C
4.3A
3.4A
2.2A
Units
Units
I
°C/W
D
°C
W
W
V
A
V
1

Related parts for IRF7756

IRF7756 Summary of contents

Page 1

... Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com HEXFET V DSS -12V -4. -4.5V GS  ƒ ƒ ƒ IRF7756 ® Power MOSFET R max I DS(on) D 0.040@V = -4.5V 4.3A ± GS 0.058@V = -2.5V 3.4A ± GS 0.087@V = -1.8V 2.2A ± TSSOP-8 Max. ...

Page 2

... IRF7756 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 10 1 ° 0.1 10 0.1 -V Fig 2. Typical Output Characteristics 2 -4.3A D 1.5 1.0 0.5 0.0 -60 -40 -20 1.5 2.0 Fig 4. Normalized On-Resistance IRF7756 VGS -7.5V -4.5V -2.5V -1.8V -1.5V -1.2V -1.0V -0.8V -0.8V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( -4. 100 120 140 160 ° ...

Page 4

... IRF7756 2400 0V MHZ C iss = rss = C gd 2000 C oss = 1600 Ciss 1200 800 Coss 400 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.2 0.4 0.6 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7756 - + ≤ 1 ≤ 0 d(off thJA A 1 ...

Page 6

... IRF7756 0.07 0.06 0.05 0.04 0.03 0.02 1.0 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform 6 0.040 0.035 0.030 -4.3A 0.025 0.020 4.0 5.0 0 Fig 12. Typical On-Resistance Vs. Drain 12V V Fig 13b. Gate Charge Test Circuit ...

Page 7

... Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com -250µ 0.001 75 100 125 150 IRF7756 0.010 0.100 1.000 10.000 100.000 Time (sec) Typical Power Vs. Time 7 ...

Page 8

... IRF7756 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ET C.) TSSOP-8 Tape and Reel DAT E CODE (YW) T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.) ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 3/04 IRF7756 TAC Fax: (310) 252-7903 9 ...

Related keywords