MOSFET 2P-CH 12V 5.5A 8-TSSOP

IRF7754

Manufacturer Part NumberIRF7754
DescriptionMOSFET 2P-CH 12V 5.5A 8-TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7754 datasheet
 

Specifications of IRF7754

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs25 mOhm @ 5.4A, 4.5VDrain To Source Voltage (vdss)12V
Current - Continuous Drain (id) @ 25° C5.5AVgs(th) (max) @ Id900mV @ 250µA
Gate Charge (qg) @ Vgs22nC @ 4.5VInput Capacitance (ciss) @ Vds1984pF @ 6V
Power - Max1WMounting TypeSurface Mount
Package / Case8-TSSOPLead Free Status / RoHS StatusContains lead / RoHS non-compliant
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Ultra Low On-Resistance
l
l
P-Channel MOSFET
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
l
Available in Tape & Reel
Description
®
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
provides thedesigner
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
, T
Junction and Storage Temperature Range
J
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
V
DSS
-12V
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
@ -4.5V
GS
@ -4.5V
GS

ƒ
ƒ
ƒ
PD - 94224
IRF7754
®
Power MOSFET
R
max
I
DS(on)
D
25m @V
= -4.5V
5.4A
-
GS
34m @V
= -2.5V
4.6A
-
GS
49m @V
= -1.8V
3.9A
-
GS
8
7
6
5
8 = D2
7 = S2
6 = S2
TSSOP-8
5 = G2
Max.
Units
-12
V
-5.5
-4.4
A
-22
1
W
0.64
W
0.01
W/°C
±8
V
-55 to +150
°C
Max.
Units
125
°C/W
1
05/14/01

IRF7754 Summary of contents

  • Page 1

    ... Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V DSS -12V -4. -4.5V GS  ƒ ƒ ƒ 94224 IRF7754 ® Power MOSFET R max I DS(on) D 25m @V = -4.5V 5. 34m @V = -2.5V 4. 49m @V = -1.8V 3. TSSOP Max. Units - ...

  • Page 2

    ... IRF7754 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 1.5 1.0 ° 0.5 = -10V DS 0.0 1.8 2.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7754 VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V -1.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -5. -4.5V ...

  • Page 4

    ... IRF7754 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 1200 Coss 800 Crss 400 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10  ° 150 0.1 0.2 0.4 0.6 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7754 D.U. µ d(on) r d(off ...

  • Page 6

    ... IRF7754 0.070 0.060 0.050 0.040 -5.5A 0.030 0.020 0.010 0.0 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.1 0.08 0.06 0.04 0.02 0 5.0 6.0 7.0 0.0 Fig 13. Typical On-Resistance Vs. ...

  • Page 7

    ... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Fig 16. Typical Power Vs. Time IRF7754 Time (sec) 7 ...

  • Page 8

    ... IRF7754 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel DAT E CODE (YW) T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) WORK YEAR Y WEEK W 2001 1 01 ...

  • Page 9

    ... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.05/01 IRF7754 TAC Fax: (310) 252-7903 9 ...