IRF7752 International Rectifier, IRF7752 Datasheet

MOSFET 2N-CH 30V 4.6A 8-TSSOP

IRF7752

Manufacturer Part Number
IRF7752
Description
MOSFET 2N-CH 30V 4.6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7752

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
861pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7752TRPBF
Manufacturer:
MAXIM
Quantity:
1 001
Part Number:
IRF7752TRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Dual N-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
@T
@T
T
STG
C
C
A
A
®
= 25°C
= 70°C
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
provides thedesigner
GS
GS
ƒ
@ 10V
@ 10V
2
3
4
1
1 = D1
4 = G1
2 = S 1
3 = S 1
V
30V
DSS
HEXFET
5 = G2
8 = D2
7 = S 2
6 = S 2
0.036@V
0.030@V
-55 to + 150
R
Max.
8
7
6
5
Max.
125
DS(on)
±4.6
±3.7
0.64
±37
± 12
1.0
8.0
30
®
GS
GS
IRF7752
Power MOSFET
max
= 4.5V
= 10V
TSSOP-8
PD -94030A
4.6A
3.9A
mW/°C
Units
Units
I
°C/W
D
W
°C
V
A
V
1
3/25/01

Related parts for IRF7752

IRF7752 Summary of contents

Page 1

... Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V R DSS DS(on) 30V 0.030@V 0.036 Max. @ 10V ±4 10V ±3.7 GS 0.64 - 150 Max. ƒ 125 PD -94030A IRF7752 ® Power MOSFET max 10V 4. 4.5V 3.9A GS TSSOP-8 Units ±37 1.0 W 8.0 mW/°C ± °C Units °C/W 1 3/25/01 ...

Page 2

... IRF7752 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 2.3V 1 0.1 10 100 0.01 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 15V 0.0 3.3 3.7 4.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7752 VGS TOP 10.0V 5.0V 4.5V 3.3V 3.0V 2.7V 2.5V BOTTOM 2.3V 2.3V 20µs PULSE WIDTH Tj = 150°C 0 Drain-to-Source Voltage (V) 4.6A V ...

Page 4

... IRF7752 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 600 C oss 400 200 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7752 D.U. µ d(off thJA A ...

Page 6

... IRF7752 0.080 0.060 0.040 4.6A 0.020 0.000 2.0 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform 6 0.030 0.025 0.020 7.0 8.0 9.0 10.0 0 Fig 12. Typical On-Resistance Vs. 12V V Fig 13b. Gate Charge Test Circuit VGS = 4 ...

Page 7

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 3/01 IRF7752 TAC Fax: (310) 252-7903 7 ...

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