IRF7757TR International Rectifier, IRF7757TR Datasheet - Page 5

• Manufacturer Part Number: IRF7757TR
• Description: HEXFET TSSOP-8
• Manufacturer: International Rectifier

Specifications of IRF7757TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t

R
d(on)
Pulse Width
Duty Factor
G
1. Duty factor D = t / t
2. Peak T = P
V
Notes:
V
GS
GS
t
r
V
DS
1
J
µs
DM
x Z
1

D.U.T.
IRF7757
thJC
t
P
2
d(off)
DM
R
+ T
10
D
C
t
t
1
f
t
2
+
-
V
DD
5
100