IRF7313QTRPBF International Rectifier, IRF7313QTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7313QTRPBF
• Description: MOSFET HEX N-CH DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7313QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7313QTRPBFCT

100
1200
0.1
10
0.00001
900
600
300
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
V
DS
V
C
C
C
, Drain-to-Source Voltage (V)
(THERMAL RESPONSE)
0.0001
GS
iss
rss
oss
C
C
C
SINGLE PULSE
oss
rss
iss
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.001
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
0.1
8
4
0
0
I =
D
5.8A
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
G
10
1
J
DM
V
x Z
20
DS
1
thJA
= 15V
P
2
DM
+ T
10
A
t
1
30
t
2
100
40