ZVP4525E6TA Diodes Zetex, ZVP4525E6TA Datasheet

MOSFET P-CH 250V 197MA SOT-23-6

ZVP4525E6TA

Manufacturer Part Number
ZVP4525E6TA
Description
MOSFET P-CH 250V 197MA SOT-23-6
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZVP4525E6TA

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
197mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
3.45nC @ 10V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZVP4525E6TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVP4525E6TA
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
ZVP4525E6TA
Manufacturer:
LEGERITY
Quantity:
1
ISSUE 1 - MARCH 2001
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DEVICE
ZVP4525TA
ZVP4525TC
(
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525E6
SOT23-6 package
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
P52
REEL SIZE
(inches)
13
7
TAPE WIDTH (mm)
8mm embossed
8mm embossed
1
QUANTITY
PER REEL
3000 units
10000 units
ZVP4525E6
Top View
SOT23-6

Related parts for ZVP4525E6TA

ZVP4525E6TA Summary of contents

Page 1

P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting ...

Page 2

ZVP4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V; TA=25°C)( =10V; TA=70°C)(a) GS Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C ...

Page 3

ISSUE 1 - MARCH 2001 CHARACTERISTICS 3 ZVP4525E6 ...

Page 4

ZVP4525E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 ZVP4525E6 5 ...

Page 6

ZVP4525E6 CHARACTERISTICS 6 ISSUE 1 - MARCH 2001 ...

Page 7

TEST CIRCUITS ISSUE 1 - MARCH 2001 ZVP4525E6 7 ...

Page 8

ZVP4525E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...

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