SI7403BDN-T1-E3 Vishay, SI7403BDN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7403BDN-T1-E3
• Description: MOSFET P-CH 20V 8A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7403BDN-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 8V
• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Power - Max: 9.6W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -770mV
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.074 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7403BDN-T1-E3TR

Si7403BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
7
6
5
4
3
2
1
0
8
4
0
0.0
0
0
I
D
V
V
GS
= 5.1 A
GS
= 5 thru 3 V
0.5
= 2.5 V
2
4
V
DS
Output Characteristics
V
Q
DS
g
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
I
D
= 10 V
Gate Charge
- Drain Current (A)
4
8
1.5
V
V
DS
GS
12
6
= 14 V
= 4.5 V
2.0
16
8
2.5
2.5 V
1.5 V
2 V
1 V
10
3.0
20
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
= 5.1 A
- 25
0.5
4
V
V
T
Transfer Characteristics
GS
DS
0
J
25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
1.0
8
C
C
50
S-83051-Rev. B, 29-Dec-08
oss
iss
Document Number: 73333
T
C
1.5
12
V
= - 55 °C
75
GS
= 2.5 V
100
V
GS
2.0
16
125 °C
= 4.5 V
125
150
2.5
20