ZXMP10A16KTC Diodes Zetex, ZXMP10A16KTC Datasheet

MOSFET P-CH 100V DPAK

ZXMP10A16KTC

Manufacturer Part Number
ZXMP10A16KTC
Description
MOSFET P-CH 100V DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMP10A16KTC

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
235 mOhm @ 2.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
717pF @ 50V
Power - Max
2.15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMP10A16KTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMP10A16KTC
Quantity:
370
ZXMP10A16K
100V DPAK P-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMP
10A16
Issue 1 - October 2006
© Zetex Semiconductors plc 2006
Device
ZXMP10A16KTC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
DC-DC converters
Power management functions
Disconnect switches
Motor control
V
(BR)DSS
-100
0.235 @ V
0.285 @ V
R
Reel size
(inches)
DS(on)
13
GS
GS
( )
= -10V
= -6V
Tape width
(mm)
16
I
1
D
4.6
4.2
(A)
Quantity
per reel
2500
Pinout - top view
www.zetex.com
G
G
D
D
D
S
S

Related parts for ZXMP10A16KTC

ZXMP10A16KTC Summary of contents

Page 1

... Low gate drive • DPAK package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMP10A16KTC 13 Device marking ZXMP 10A16 Issue 1 - October 2006 © Zetex Semiconductors plc 2006 ( ) I ( -10V 4 -6V 4.2 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at T ...

Page 3

Typical characteristics Issue 1 - October 2006 © Zetex Semiconductors plc 2006 ZXMP10A16K 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

Page 5

Typical characteristics Issue 1 - October 2006 © Zetex Semiconductors plc 2006 ZXMP10A16K 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform d(off) t (on) Switching time waveforms Issue 1 - October 2006 © Zetex Semiconductors plc 2006 Gate charge test circuit V DS ...

Page 7

Issue 1 - October 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMP10A16K www.zetex.com ...

Page 8

Package details - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...

Related keywords