SI4436DY-T1-E3 Vishay, SI4436DY-T1-E3 Datasheet

MOSFET N-CH 60V 8A 8-SOIC

SI4436DY-T1-E3

Manufacturer Part Number
SI4436DY-T1-E3
Description
MOSFET N-CH 60V 8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI4436DY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 30V
Power - Max
5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
36mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.5V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4436DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4436DY-T1-E3
Manufacturer:
IR
Quantity:
15 600
Part Number:
SI4436DY-T1-E3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI4436DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free)
DS
60
(V)
G
S
S
S
0.043 at V
0.036 at V
1
2
3
4
R
DS(on)
Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
SO-8
GS
GS
(Ω)
= 4.5 V
= 10 V
J
= 150 °C)
b, d
8
7
6
5
N-Channel 60-V (D-S) MOSFET
D
D
D
D
I
D
(A)
8
8
d
A
Q
10.5 nC
= 25 °C, unless otherwise noted
g
(Typ.)
Steady State
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Optimized
• CCFL Inverter
Definition
Rectifier Operation
100 % R
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
and UIS Tested
®
for
Power MOSFET
G
Typical
38
20
“Low
N-Channel MOSFET
D
Side”
S
- 55 to 150
6.1
4.8
2.1
2.5
1.6
Limit
± 20
Maximum
11.2
6.8
4.2
3.2
60
25
15
8
5
a
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
50
25
Synchronous
Si4436DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4436DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free) Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4436DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S09-0322-Rev. B, 02-Mar-09 New Product thru 1.2 1.4 1.6 1.8 2.0 1500 1200 900 600 300 2.0 1.8 1.6 1 1.2 DS 1.0 0.8 0 Si4436DY Vishay Siliconix – 55 ° ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 0 ...

Page 4

... Si4436DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.6 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.08 0.07 0.06 0.05 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73664 S09-0322-Rev. B, 02-Mar-09 New Product 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4436DY Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 5 ...

Page 6

... Si4436DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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