ZVNL110GTA Diodes Zetex, ZVNL110GTA Datasheet
ZVNL110GTA
Manufacturer Part Number
ZVNL110GTA
Description
MOSFET N-CH 100V 600MA SOT223
Manufacturer
Diodes Zetex
Type
Power MOSFETr
Datasheet
1.ZVNL110GTA.pdf
(1 pages)
Specifications of ZVNL110GTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
75pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
600mA
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Other names
ZVNL110GTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVNL110GTA
Manufacturer:
ZETEX
Quantity:
20 000
SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996
FEATURES
*
PARTMARKING DETAIL - ZVNL110
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
LOW R
DS(ON)
- 3
amb
=25°C
amb
BV
C
t
SYMBOL MIN.
I
I
I
R
C
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
100
0.75
750
225
3 - 419
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
1.5
100
10
100
4.5
3.0
75
25
8
7
12
15
13
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=100V, V
=80V, V
=25V, V
=5V, I
=10V, I
=25V, I
=25V, V
VALUE
25V, I
100
600
ZVNL110G
6
2
20
D
D
GS
DS
=250mA
D
D
D
GS
GS
GS
=500mA
=1A, V
=500mA
=0V
GS
= V
DS
=0V, T=125°C
=5V
=0V, f=1MHz
=0V
=0V
GS
GS
G
UNIT
=10V
mA
°C
W
A
V
V
D
(2)
S
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