ZVN4210GTA Diodes Zetex, ZVN4210GTA Datasheet
ZVN4210GTA
Manufacturer Part Number
ZVN4210GTA
Description
MOSFET N-CHAN 100V SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZVN4210GTA.pdf
(3 pages)
Specifications of ZVN4210GTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
800mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
100pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
ZVN4210GTR
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - NOVEMBER 1995
FEATURES
*
PARTMARKING DETAIL - ZVN4210
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
Low R
DS(on)
= 1.5
amb
=25°C
amb
SYMBOL MIN.
BV
I
I
I
R
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
100
0.8
2.5
250
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
2.4
100
10
100
1.5
1.8
100
40
12
4
8
20
30
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
=100V, V
=80V, V
=25V, V
=25V,I
=25V, V
= 20V, V
=10V,I
=5V,I
VALUE
25V, I
100
0.8
ZVN4210G
6
2
20
D
D
=500mA
D
D
GS
DS
D
=1.5A
=1.5A
GS
GS
GS
=1.5A
=0V
GS
= V
DS
=0V, T=125°C
=10V
=0V, f=1MHz
=0
=0V
GS
G
UNIT
°C
W
A
A
V
V
D
(2)
S
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ZVN4210GTA Summary of contents
Page 1
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES * Low R = 1.5 DS(on) PARTMARKING DETAIL - ZVN4210 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate-Source Voltage Power ...
Page 2
ZVN4210G DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER Diode Forward Voltage (1) Reverse Recovery Time (to I =10%) R (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise ...
Page 3
ZVN4210G TYPICAL CHARACTERISTICS Drain Source Voltage (Volts) DS Saturation Characteristics 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 - ...