SI4431BDY-T1-E3 Vishay, SI4431BDY-T1-E3 Datasheet

MOSFET P-CH 30V 5.7A 8-SOIC

SI4431BDY-T1-E3

Manufacturer Part Number
SI4431BDY-T1-E3
Description
MOSFET P-CH 30V 5.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI4431BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-7.5A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Power Dissipation Pd
2.5W
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.03Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4431BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
37 500
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4431BDY-T1-E3
0
Company:
Part Number:
SI4431BDY-T1-E3
Quantity:
70 000
Company:
Part Number:
SI4431BDY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 30
G
S
S
S
(V)
1
2
3
4
T op V i e w
SO-8
Si4431BDY-T1-E3 (Lead (Pb)-free)
Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.050 at V
0.030 at V
R
DS(on)
J
a
8
7
6
5
= 150 °C)
GS
a
GS
(Ω)
= - 4.5 V
= - 10 V
D
D
D
D
P-Channel 30-V (D-S) MOSFET
a
a
A
I
D
- 7.5
- 5.8
= 25 °C, unless otherwise noted
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
Symbol
Symbol
T
R
R
J
Available
TrenchFET
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFETs
Typical
- 7.5
- 6.0
- 2.1
10 s
2.5
1.6
38
70
22
G
- 55 to 150
P-Channel MOSFET
± 20
- 30
- 30
Steady State
D
Maximum
S
- 5.7
- 4.6
- 1.2
1.5
0.9
50
85
28
Vishay Siliconix
Si4431BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4431BDY-T1-E3 Summary of contents

Page 1

... Si4431BDY-T1-E3 (Lead (Pb)-free) Ordering Information: Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si4431BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72092 S09-0131-Rev. C, 02-Feb- °C J 0.8 1.0 1.2 1.4 Si4431BDY Vishay Siliconix 1600 1400 1200 C 1000 iss 800 600 400 C oss C rss 200 Drain-to-Source Voltage (V) DS Capacitance 1 7 ...

Page 4

... Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 emperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on D(on) 1 Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72092. Document Number: 72092 S09-0131-Rev. C, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4431BDY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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