SIA814DJ-T1-GE3 Vishay, SIA814DJ-T1-GE3 Datasheet
SIA814DJ-T1-GE3
Specifications of SIA814DJ-T1-GE3
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SIA814DJ-T1-GE3 Summary of contents
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... 2. Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) ...
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... SiA814DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board ttp://www.vishay.com/ppg?73257). The PowerPAK SC- leadless package. The end of the lead terminal is exposed h d ...
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... °C, unless otherwise noted J Symbol Test Conditions 125 ° 125 ° ° SiA814DJ Vishay Siliconix Min. Typ. Max. 4.5 15 0.8 1 ° Min. Typ. Max. 0.37 0.45 0.31 0.37 0.46 0.56 0.41 0.50 0.025 0.1 0.6 6.00 35 www.vishay.com Unit Unit V mA ...
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... SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.155 0.130 0.105 0.080 V GS 0.055 V GS 0.030 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 Total Gate Charge (nC) g Gate Charge www.vishay.com 4 New Product = 25 ° ...
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... Limited DS(on 0 °C A BVDSS Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA814DJ Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.01 0 100 Pulse (s) Single Pulse Power (Junction-to-Ambient) 100 µs ...
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... SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com ...
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... Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA814DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = °C (t) 3 ...
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... SiA814DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 100 Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 New Product = 25 °C, unless otherwise noted 0.1 75 100 125 150 250 200 150 100 Drain-to-Source Voltage (V) DS Capacitance 150 ° °C J 0.0 0.1 0.2 0.3 0.4 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68672. Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA814DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...