SI4435BDY-T1-E3 Vishay, SI4435BDY-T1-E3 Datasheet

MOSFET P-CH 30V 7A 8-SOIC

SI4435BDY-T1-E3

Manufacturer Part Number
SI4435BDY-T1-E3
Description
MOSFET P-CH 30V 7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4435BDY-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4435BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4435BDY-T1-E3
Manufacturer:
EXAR
Quantity:
12 000
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY-Pb
Quantity:
40
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72123
S09-0767-Rev. D, 04-May-09
Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
THERMAL RESISTANCE RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
G
S
S
S
Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.035 at V
0.020 at V
1
2
3
4
R
Top View
DS(on)
SO-8
J
a
= 150 °C)
GS
GS
a
= - 4.5 V
(Ω)
= - 10 V
P-Channel 30-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
- 9.1
- 6.9
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC
• Load Switches
• Battery Switch
Symbol
Symbol
T
R
R
J
Definition
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
- 9.1
- 7.3
- 2.1
10 s
2.5
1.6
40
70
18
G
P-Channel MOSFET
- 55 to 150
± 20
- 30
- 50
Steady State
D
S
Maximum
- 1.25
- 5.6
1.5
0.9
- 7
50
85
22
Vishay Siliconix
Si4435BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4435BDY-T1-E3 Summary of contents

Page 1

... 4 SO Top View Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free) Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4435BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72123 S09-0767-Rev. D, 04-May- °C J 0.8 1.0 1.2 1.4 Si4435BDY Vishay Siliconix 2400 1800 C iss 1200 600 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 9 1.4 1.2 1.0 ...

Page 4

... Si4435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 emperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited (DS) D(on) Limited °C A 0.1 Single Pulse BVDSS Limited 0 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72123. Document Number: 72123 S09-0767-Rev. D, 04-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4435BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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