SI4462DY-T1-E3 Vishay, SI4462DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4462DY-T1-E3
• Description: MOSFET N-CH 200V 1.15A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4462DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.15 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 510mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4462DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72093
S09-0705-Rev. C, 27-Apr-09
0.1
0.8
0.6
0.4
0.2
0.0
10
5
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 1.5 A
0.2
On-Resistance vs. Drain Current
= 100 V
1
T
1
J
V
= 150 °C
SD
Q
V
g
0.4
GS
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
2
I
D
Gate Charge
= 6 V
- Drain Current (A)
2
0.6
3
3
0.8
4
T
V
J
GS
= 25 °C
4
1.0
5
= 10 V
1.2
6
5
2.5
2.1
1.7
1.3
0.9
0.5
0.8
0.6
0.4
0.2
0.0
400
300
200
100
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 1.5 A
C
rss
= 10 V
2
V
V
GS
DS
T
20
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25
Capacitance
4
C
iss
50
C
Vishay Siliconix
40
oss
I
D
6
75
= 1.5 A
Si4462DY
www.vishay.com
100
60
8
125
150
10
80
3