SI7601DN-T1-GE3 Vishay, SI7601DN-T1-GE3 Datasheet
SI7601DN-T1-GE3
Specifications of SI7601DN-T1-GE3
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SI7601DN-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si7601DN-T1-E3 (Lead (Pb)-free) Si7601DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si7601DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditins is 81 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...
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... Gate Charge Document Number: 73778 S-81549-Rev. B, 07-Jul-08 New Product 1.8 2.4 3.0 2500 2000 1500 1000 500 1.6 1.4 1 1.0 0.8 0 Si7601DN Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...
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... Si7601DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.4 1 250 µA D 1.0 0.8 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0. °C J 0.02 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73778 S-81549-Rev. B, 07-Jul-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7601DN Vishay Siliconix 100 125 - Case Temperature (° Power, Junction-to-Case www.vishay.com 150 5 ...
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... Si7601DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...