ZVN4206AV Diodes Zetex, ZVN4206AV Datasheet - Page 3

• Manufacturer Part Number: ZVN4206AV
• Description: MOSFET N-CH 60V 600MA TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN4206AV

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 700mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ZVN4206AV
1000
160
900
200
120
80
40
Maximum repetative avalanche energy
800
700
600
500
200
100
400
300
0
Capacitance v drain-source voltage
0
Transconductance v drain current
0
0
10
1
v Junction Temperature
I
V
T
D
DS
j
2
- Drain Current (Amps)
- Junction Temperature (°C)
20
-Drain Source Voltage (Volts)
3
V
DS=
30
4
TYPICAL CHARACTERISTICS
10V
40
5
50
6
7
60
C
C
C
8
iss
oss
rss
70
9
10
80
Maximum repetative avalanche current
Transconductance v gate-source voltage
1000
900
800
700
600
500
200
400
300
100
14
12
10
16
0
8
6
4
2
0
Gate charge v gate-source voltage
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
v Junction Temperature
1
T
j
V
I
- Junction Temperature (°C)
D=
2
GS
1.5A
-Gate Source Voltage (Volts)
3
Q-Charge (nC)
4
V
DS=
V
5
DS
20V
10V
=
6
40V 60V
7
8
9
10