SI4463BDY-T1-E3 Vishay, SI4463BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4463BDY-T1-E3
• Description: MOSFET P-CH 20V 9.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4463BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.8 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 13.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4463BDY-T1-E3TR

Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
- 0.4
0.6
0.4
0.2
0.0
0.2
0.01
- 50
0.1
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
I
D
Threshold Voltage
T
= 250 µA
J
– Temperature (°C)
25
10 -
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Limited by R
0.01
100
100
10 -
0.1
10
1
0.1
2
* V
125
DS(on)
Limited
I
D(on)
GS
Single Pulse
T
*
> minimum V
C
150
V
Square Wave Pulse Duration (s)
= 25 °C
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10 -
1
1
BVDSS Limited
GS
at which R
DS(on)
10
1
50
40
30
20
10
0
0.01
I
is specified
DM
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
Limited
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
1
T
t
A
1
Time (s)
S09-0393-Rev. C, 09-Mar-09
= P
t
2
Document Number: 72789
DM
Z
thJA
100
thJA
10
t
t
1
2
(t)
= 70 °C/W
100
600
600