SI7463DP-T1-GE3 Vishay, SI7463DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7463DP-T1-GE3
• Description: MOSFET P-CH 40V 11A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7463DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0092 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18.6A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7463DP-T1-GE3TR

Si7463DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
0.1
2
1
0.8
0.6
0.4
0.2
0.0
0.2
0.4
10 -
- 50
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
10 -
Threshold Voltage
T
J
3
- T emperature (°C)
2 5
Limited by R
Single Pulse
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
1
0.1
7 5
I
D
10 -
= 250 µA
DS(on)
Limited
* V
I
D(on)
2
100
GS
Single Pulse
T
*
A
> minimum V
V
= 25 °C
DS
125
- Drain-to-Source Voltage (V)
Safe Operating Area
Square Wave Pulse Duration (s)
1
150
10 -
GS
1
at which R
BVDSS Limited
DS(on)
10
1
is specified
100
80
60
40
20
0
0.01
I
DM
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Limited
Single Pulse Power, Junction-to-Ambient
100
1 0
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
A
1
Time (s)
= P
t
2
DM
1
S09-1928-Rev. F, 28-Sep-09
Z
th J A
Document Number: 72440
th J A
100
t
t
1
2
(t )
= 52 °C/W
10
600
100