ZXM66P03N8TA Diodes Zetex, ZXM66P03N8TA Datasheet

MOSFET P-CH 30V 7.9A 8-SOIC

ZXM66P03N8TA

Manufacturer Part Number
ZXM66P03N8TA
Description
MOSFET P-CH 30V 7.9A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXM66P03N8TA

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 5.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.25A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 5V
Input Capacitance (ciss) @ Vds
1979pF @ 25V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXM66P03N8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM66P03N8TA
Manufacturer:
Diodes
Quantity:
42 000
Part Number:
ZXM66P03N8TA
Manufacturer:
ZETEX
Quantity:
20 000
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - JANUARY 2006
DEVICE
ZXM66P03N8TA
ZXM66P03N8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
ZXM
66P03
=-30V; R
DS(ON)
REEL SIZE
=0.025 ; I
13”
7”
D
=-7.9A
TAPE WIDTH
12mm
12mm
1
QUANTITY
PER REEL
500 units
2500 units
ZXM66P03N8
S
S
S
S E M I C O N D U C T O R S
Top View
SO8
D
D
D

Related parts for ZXM66P03N8TA

ZXM66P03N8TA Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE ZXM66P03N8TA 7” ZXM66P03N8TC 13” DEVICE MARKING • ZXM 66P03 ISSUE 1 - JANUARY 2006 =-7.9A TAPE WIDTH QUANTITY PER REEL 12mm ...

Page 2

ZXM66P03N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current V GS =-10V =25°C( =-10V =70°C( =-10V =25°C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) ...

Page 3

ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...

Page 4

ZXM66P03N8 PACKAGE DIMENSIONS © Zetex Semiconductors plc 2006 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany USA Telefon: (49 Telephone: (1) 631 360 2222 Fax: ...

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