IRFIB7N50APBF Vishay, IRFIB7N50APBF Datasheet
IRFIB7N50APBF
Specifications of IRFIB7N50APBF
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IRFIB7N50APBF Summary of contents
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... Uninterruptible Power Supply • High Speed Power Switching • High Voltage Isolation = 2 TYPICAL SMPS TOPOLOGIES • Two Transistor Forward S • Half and Full Bridge Convertors N-Channel MOSFET • Power Factor Correction Boost TO-220 FULLPAK IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A = 25 °C, unless otherwise noted ° ...
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... IRFIB7N50A, SiHFIB7N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... S09-0517-Rev. B, 13-Apr-09 100 10 1 ° 0.1 10 100 3.0 2.5 2.0 1.5 1.0 0.5 ° 0.0 100 Fig Normalized On-Resistance vs. Temperature IRFIB7N50A, SiHFIB7N50A Vishay Siliconix T = 150 C ° ° 100V DS 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...
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... IRFIB7N50A, SiHFIB7N50A Vishay Siliconix 2400 1MHz iss rss gd 2000 oss iss 1600 C oss 1200 800 C rss 400 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 6. FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91176 S09-0517-Rev. B, 13-Apr-09 IRFIB7N50A, SiHFIB7N50A 90 % 125 150 ° 0.001 0. Rectangular Pulse Duration ( Driver + - Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFIB7N50A, SiHFIB7N50A Vishay Siliconix 600 500 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 660 640 620 600 580 0.0 1.0 2.0 3.0 4 Avalanche Current (A) av Fig. 12d -Typical Drain-to-Source Voltage vs. Avalanche Current www ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91176. Document Number: 91176 S09-0517-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...