RHK003N06T146 Rohm Semiconductor, RHK003N06T146 Datasheet

RHK003N06T146

Manufacturer Part Number

RHK003N06T146

Description

MOSFET N-CH 60V 300MA SOT-346

Manufacturer

Rohm Semiconductor

Datasheet

1.RHK003N06T146.pdf (3 pages)

Specifications of RHK003N06T146

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1 Ohm @ 300mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

300mA

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

6nC @ 10V

Input Capacitance (ciss) @ Vds

33pF @ 10V

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-59-3, SMT3, SOT-346, TO-236

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.3 A

Power Dissipation

200 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

RHK003N06T146TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

RHK003N06T146

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Current page: 1 of 3
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Transistors

4V Drive Nch MOS FET

RHK003N06

Silicon N-channel MOS FET

1) Low On-resistance.

2) 4V drive.

Switching

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

∗ Each terminal mounted on a recommended land

Channel to ambient

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Source current

(Body diode)

Type

RHK003N06

Structure

Features

Applications

Packaging specifications and h

Absolute maximum ratings (Ta=25°C)

Thermal resistance

Package

Code

Basic ordering unit (pieces)

Parameter

Continuous

Pulsed

Continuous

Pulsed

Taping

T146

3000

Rth(ch-a)

Symbol

Tstg

Tch

DSS

GSS

∗1

∗2

∗

−55 to +150

Limits

±300

±1.2

625

±20

200

800

200

150

External dimensions (Unit : mm)

(1)Source

(2)Gate

(3)Drain

Inner circuit

SMT3

°C/W

Unit

°C

0.95 0.95

( 2 )

( 3 )

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Abbreviated symbol : RKS

1.9

2.9

0.4

( 1 )

(2)

0.15

Each lead has same dimensions

1.1

0.8

∗1

RHK003N06

(3)

(1)

(2)

(3)

∗2

Source

Gate

Drain

1/2

Related parts for RHK003N06T146

RHK003N06T146 Summary of contents

Page 1

Transistors 4V Drive Nch MOS FET RHK003N06 Structure Silicon N-channel MOS FET Features 1) Low On-resistance drive. Applications Switching Packaging specifications and h FE Package Taping Type Code T146 Basic ordering unit (pieces) 3000 RHK003N06 Absolute maximum ratings ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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