RTQ020N03TR Rohm Semiconductor, RTQ020N03TR Datasheet
RTQ020N03TR
Manufacturer Part Number
RTQ020N03TR
Description
MOSFET N-CH 30V 2A TSMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.RTQ020N03TR.pdf
(3 pages)
Specifications of RTQ020N03TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
TSMT6
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
1250 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RTQ020N03TR
Manufacturer:
ROHM
Quantity:
38 000
Transistors
2.5V Drive Nch MOS FET
RTQ020N03
Silicon N-channel MOS FET
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗ Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RTQ020N03
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
∗
−55 to +150
Limits
Limits
±2.0
±8.0
1.25
100
150
1.0
8.0
30
12
External dimensions (Unit : mm)
Inner circuit
TSMT6
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
1pin mark
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(6)
(1)
(6)
Abbreviated symbol : QS
0.95
(1)
(5)
2.9
1.9
0.4
0.95
(2)
(4)
(3)
Each lead has same dimensions
(5)
(2)
∗2
1.0MAX
RTQ020N03
0.16
0.85
0.7
∗1
0 ~ 0.1
(4)
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1/2
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RTQ020N03TR Summary of contents
Page 1
Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). Applications Switching Packaging specifications Package Taping Type Code Basic ordering ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...