RHP030N03T100 Rohm Semiconductor, RHP030N03T100 Datasheet
RHP030N03T100
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RHP030N03T100 Summary of contents
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Transistors 4V Drive Nch MOSFET RHP030N03 Structure Silicon N-channel MOSFET Features 1) Low On-resistance drive. Applications Switching Packaging specifications Package Taping Type Code T100 Basic ordering unit (pieces) 1000 RHP030N03 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source ...
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Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
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Transistors Electrical characteristics curves 1000 Ta=25°C f=1MHz V =0V GS Ciss 100 Coss Crss 10 1 0.01 0 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 0.5 Ta=25°C Pulsed 0.4 =3. 0.3 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...