RSD200N10TL Rohm Semiconductor, RSD200N10TL Datasheet
RSD200N10TL
Specifications of RSD200N10TL
Related parts for RSD200N10TL
RSD200N10TL Summary of contents
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Transistors 4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (V ) GSS guaranteed to be 30V. 5) Drive circuits can be simple. ...
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Transistors Electrical characteristics (Ta=25 C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage R Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise ...
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Transistors Electrical characteristic curves RSD200N10 15 T a=25°C V =50V DD I =20A D Pulsed Total Gate Charge : Qg(nC) Fig.3 Dynamic Input Characteristics Rev.A 3/5 ...
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Transistors RSD200N10 Rev.A 4/5 ...
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Transistors Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.2-1 Gate charge measurement circuit Fig.3-1 Avalanche measurement circuit RSD200N10 Fig.1-2 Switching waveforms Fig.2-2 Gate charge waveform Fig.3-2 Avalanche waveform Rev.A 5/5 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...