IRLMS5703TRPBF International Rectifier, IRLMS5703TRPBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRLMS5703TRPBF
Manufacturer Part Number
IRLMS5703TRPBF
Description
MOSFET P-CH 30V 2.4A 6-TSOP
Manufacturer
International Rectifier
Specifications of IRLMS5703TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
2.3A
Power Dissipation
1.7W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
Micro
Channel Type
P
Current, Drain
-2.4 A
Gate Charge, Total
7.2 nC
Polarization
P-Channel
Resistance, Drain To Source On
0.18 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
1.1 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
400 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.3 A
Mounting Style
SMD/SMT
Gate Charge Qg
7.2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLMS5703PBFTR
Available stocks
Part Number:
IRLMS5703TRPBF
Part Number:
IRLMS5703TRPBF
Part Number:
IRLMS5703TRPBF
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Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
www.irf.com
θ
®
power MOSFETs are well known for,
R
DS(on)
®
power MOSFET with R
®
power MOSFETs from
‚
„
DS(on)
DS(on)
G
D
D
1
3
2
Top View
IRLMS5703PbF
HEXFET
6
5
4
D
D
S
A
Micro6™
®
R
Power MOSFET
DS(on)
V
DSS
= -30V
= 0.18Ω
mW/°C
1
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IRLMS5703TRPBF Summary of contents
... DS(on ® Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ® HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
‚ ≤ ≤ ≤ ƒ ≤ „ ≤ „ Ω „ „ Ω „ Ω, G ƒ ƒ ≤ ≤ www.irf.com D S ...
VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3. 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS 100 10 ...
1MHz iss 300 rss oss ds gd 250 C iss 200 C oss 150 100 ...
Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. -3mA Current Sampling Resistors 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 ...
Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent 6 + • • ƒ • - „ - • • • P.W. Period D = Period Waveform Body ...
Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) -B- 2.80 (.111 ) 1.75 (.068 ) 3.00 (.118 ) 1.50 (.060 ) 2.60 (.103 ) - 0.95 ( .0375 ...
Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This ...
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