IRF8788TRPBF International Rectifier, IRF8788TRPBF Datasheet

MOSFET N-CH 30V 24A SO-8

IRF8788TRPBF

Manufacturer Part Number
IRF8788TRPBF
Description
MOSFET N-CH 30V 24A SO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8788TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.8 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
66nC @ 4.5V
Input Capacitance (ciss) @ Vds
5720pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
24 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
44 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF8788TRPBFTR

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Applications
l
l
Benefits
l
l
l
l
l
l
l
Notes  through
www.irf.com
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Description
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
Processor Power
Isolated DC-DC Converters
Very Low Gate Charge
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V
100% tested for Rg
Lead-Free
@T
@T
Synchronous MOSFET for Notebook
Synchronous Rectifier MOSFET for
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 9
at 4.5V V
operation
GS
including Rds(on) and gate charge to reduce both conduction and
Parameter
Parameter
fg
g
GS
GS
@ 10V
@ 10V
V
30V 2.8m : @V
G
S
S
S
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
-55 to + 150
HEXFET
8
7
6
5
IRF8788PbF
DS(on)
Max.
0.02
190
±20
2.5
1.6
30
24
19
D
D
D
D
A
A
GS
max
Max.
®
20
50
Power MOSFET
= 10V 44nC
SO-8
Units
Units
97137A
W/°C
°C/W
Qg
°C
W
V
A
8/18/08
1

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IRF8788TRPBF Summary of contents

Page 1

Applications Synchronous MOSFET for Notebook l Processor Power Synchronous Rectifier MOSFET for l Isolated DC-DC Converters Benefits Very Low Gate Charge l Very Low DS(on) GS Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage l ...

Page 2

IRF8788PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH 0 25°C 2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 15V ≤ 60μs PULSE WIDTH 100 150°C ...

Page 4

IRF8788PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( ...

Page 6

IRF8788PbF 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U 20V GS 0.01 Ω Fig 14a. Unclamped ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 16. DUT 0 1K 20K S Fig 17a. Gate Charge Test Circuit www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse ...

Page 8

IRF8788PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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