IRLR3303TRPBF International Rectifier, IRLR3303TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLR3303TRPBF
• Description: MOSFET N-CH 30V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3303TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 33 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 36 ns
• Gate Charge Qg: 17.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 200 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR3303PBFTR; IRLR3303TRPBF; IRLR3303TRPBFTR

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
I AS
t p
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
300
250
200
150
100
50
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
25
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
= 15V
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
I
G
100
D.U.T.
125
I
www.irf.com
D
TOP
BOTTOM
+
-
150
V
DS
14A
20A
8.3A
I
D
175
A