IRFIZ34NPBF International Rectifier, IRFIZ34NPBF Datasheet - Page 3

• Manufacturer Part Number: IRFIZ34NPBF
• Description: MOSFET N-CH 55V 21A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFIZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 37W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 31 W
• Mounting Style: Through Hole
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIZ34NPBF

1000
100
100
10
10
1
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
15V
DS
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
T = 25°C
J
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
6
1
T = 175°C
J
7
4.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
C
= 25V
10
8
9
100
10
A
A
1000
100
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
1
0.1
-60 -40 -20
TOP
BOTTOM 4.5V
I
D
= 26A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Drain-to-Source Voltage (V)
0
20
1
40
60
4.5V
20µs PULSE WIDTH
T = 175°C
80 100 120 140 160 180
C
10
V
GS
= 10V
100
A
A