IRF6620 International Rectifier, IRF6620 Datasheet - Page 2

• Manufacturer Part Number: IRF6620
• Description: MOSFET N-CH 20V 27A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4130pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6620TR


‚
ƒ
„
Notes:
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
iss
oss
rss
g
Q
Q
Q
Q
sw
oss
rr
2
max. junction temperature.
Repetitive rating; pulse width limited by
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R
GS(th)
DSS
gs1
gs2
gd
godr
G
DSS
= 25Ω, I
/∆T
/∆T
J
J
J
= 25°C, L = 0.16mH,
AS
J
= 25°C (unless otherwise specified)
= 22A.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current@ T
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
+ Q
gd
)
…
†
‡
ˆ
C
=25°C
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
T
R
part.
back and with small clip heatsink.
C
θ
is measured at
measured with thermal couple mounted to top (Drain) of
Min. Typ. Max. Units
Min. Typ. Max. Units
1.55
–––
–––
–––
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
4130
1160
–––
–––
-5.8
–––
–––
–––
–––
–––
560
–––
–––
2.1
2.8
9.5
3.5
8.8
6.2
6.6
0.8
16
28
12
16
18
80
20
23
13
J
-100
2.45
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
220
2.7
3.6
1.0
1.0
42
35
20
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs e
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 22A
= 22A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 16V, V
= 16V, V
= 20V
= -20V
= 10V, I
= 10V
= 4.5V
= 10V, V
= 16V, V
= 0V
= 10V
GS
, I
D
Conditions
Conditions
S
F
D
D
D
= 250µA
D
GS
GS
GS
GS
= 22A, V
= 22A
= 250µA
= 22A
= 27A e
= 22A e
= 0V
= 0V, T
= 0V
= 4.5V e
D
www.irf.com
GS
= 1mA
J
= 125°C
= 0V e
G
D
S