IRF6717MTR1PBF International Rectifier, IRF6717MTR1PBF Datasheet

IRF6717MTR1PBF

Manufacturer Part Number

IRF6717MTR1PBF

Description

MOSFET N-CH 25V 38A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6717MTR1PBF.pdf (9 pages)

Specifications of IRF6717MTR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.25 mOhm @ 38A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

38A

Vgs(th) (max) @ Id

2.35V @ 150µA

Gate Charge (qg) @ Vgs

69nC @ 4.5V

Input Capacitance (ciss) @ Vds

6750pF @ 13V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Transistor Polarity

N Channel

Continuous Drain Current Id

38A

Drain Source Voltage Vds

25V

On Resistance Rds(on)

1.25mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

1.8V

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

2.1 mOhms

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

220 A

Power Dissipation

96 W

Gate Charge Qg

46 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6717MTR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6717MTR1PBF

Manufacturer:

ALLEGRO

Quantity:

301

Current page: 1 of 9
Download datasheet (245Kb)

‚

Description

The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck

including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt

immunity for synchronous FET applications.

www.irf.com

Absolute Maximum Ratings

100% Rg tested

RoHs Compliant and Halgen Free

Low Profile (<0.7 mm)

Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

T J = 25°C

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

Parameter

I D = 30A

@ 10V

„

…

†

25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V

46nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

DSS

measured with thermocouple mounted to top (Drain) of part.

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

14nC

= 25°C, L = 0.64mH, R

I D = 30A

IRF6717MTRPbF

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

IRF6717MPbF

6.6nC

gs2

Max.

220

300

290

V DS = 20V

V DS = 13V

±20

DS(on)

31nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

35nC

= 30A.

oss

100

DS(on)

Units

11/19/10

1.8V

gs(th)

120

Related parts for IRF6717MTR1PBF

IRF6717MTR1PBF Summary of contents

Page 1

RoHs Compliant and Halgen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings Power Dissipation 25° 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 2. Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150° ...

Page 5

150° 25° -40°C 0 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 240 200 160 120 ...

Page 6

DUT 0 1K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit ...

Page 7

D.U.T + ƒ • • - • + ‚ „ • G • • SD • Fig 18. ™ www.irf.com Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current + D.U.T. ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations ™ Note: For the most current drawing please refer to IR website at 8 DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN A 6.25 6.35 0.246 B ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7" reel, order IRF6717MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Related keywords

irf6718l2
irf6718
irf6716m
irf6715
irf6775mtrpbf
irf6717mtr1pbf
IRF6717MTR1PBF datasheet
IRF6717MTR1PBF data sheet
IRF6717MTR1PBF pdf datasheet
IRF6717MTR1PBF component
IRF6717MTR1PBF part
IRF6717MTR1PBF distributor
IRF6717MTR1PBF RoHS
IRF6717MTR1PBF datasheet download